cdst1 16-g rohs device smd switching diode qw -b0029 page 1 rev :a features -low leakage current applications. -medium speed switching times. polarity: marking: jv d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) parameter v alue unit maximum ratings (at t a=25c unless otherwise noted) peak repetitive peak reverse voltage w orking peak reverse voltage dc blocking voltage forward continuous current power dissipation junction temperature storage temperature v rrm v rwm v r i fm p d t j t stg t 75 215 250 150 -55 to +150 v v ma mw o c o c s o t - 2 3 3 1 2 0.1 19(3.00) 0.1 10(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min symbol parameter conditions min max unit electrical characteristics (at t a=25c unless otherwise noted) reverse breakdown voltage forward voltage reverse current capacitance between terminals reverse recovery time i r =100 a i f =1ma i f =10ma i f =50ma i f =150ma v r =75v v r =0v , f=1mhz i f =i r =10ma, irr=0.1i r , rl=100 v (br)r v f1 v f2 v f3 v f4 i r c t t rr 75 v 0.9 1 1.1 1.25 5 3 v v v v v a pf ns t yp. v 2 symbol
ra ting and characteristic cur ves (cdst1 16-g) page 2 qw -b0029 fig.1 - forward current derating curve 0 i f , f o r w a r d c u r r e n t ( m a ) ambient t emperature (c) 0 1 0 0 2 0 0 fig.2 forward v oltage characteristics - 0 i f , f o r w a r d c u r r e n t ( m a ) v f , forward v oltage (v) 1 1 . 2 fig.3 reverse characteristics - 0 . 0 0 1 i r , r e v e r s e c u r r e n t ( n a ) t j , junction t emperature (c) 0 0 . 0 1 2 0 0 2 0 0 3 0 0 0 . 4 3 0 0 fig.4 diode capacitance characteristics - 0 c t , d i o d e c a p a c i t a n c e ( p f ) v r , reverse v oltage (v) 0 5 1 2 1 0 2 0 1 5 0 1 0 0 1 0 0 1 . 6 0 . 1 smd switching diode rev :a 1 0 0 2 0 0 0 . 8 1 5 0 o t j = 5 c 1 0 o t j = 2 , a x m u m a l u e 5 c m i v s o j , y p c v t = 2 5 c t i a l a l u e s 1 0 1 5 f=1mhz o t j =25 c 1 0 0
|
